| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resist composition which has small PEB temperature dependency not only in normal exposure (dry exposure) but also in immersion exposure, substantially avoids pattern collapse, shows a good profile, and has good conformability to an immersion liquid in immersion exposure, and a pattern forming method using the same. <P>SOLUTION: The resist composition comprises (A) a resin of which solubility in an alkali developer increases by the action of an acid, (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation, (C) a hydrophobic resin obtained by polymerization using a polymerization initiator and a thiol compound derivative, and (D) a solvent. The pattern forming method using the same is also provided. <P>COPYRIGHT: (C)2009,JPO&INPIT |
