| 摘要 |
Disclosed herein is a method of patterning a circuit using a self-assembly lithography. More specifically, the present invention is directed to a method of a circuit by a self-assembly lithography, which comprises the steps of: coating a substrate; forming the primary circuit; completing the patterning; and washing the substrate, a self-assembled lithographic circuit prepared by said method, and a method of forming an electrode circuit using said circuit. The inventive method of patterning a circuit using a self-assembly lithography is a new patterning process which does not use any typical photoresists and developers, thereby greatly reducing the manufacturing cost. Further, the inventive method converts the conventional top-down process into a bottom-up process, which enables to form more fine circuits with freedom. The circuit prepared according to the present invention can be effectively used for the photo process in a semiconductor and a display.
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