| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a ZnO vapor deposition material whose evaporation rate and film deposition rate upon film deposition are high, and which forms a dense ZnO film having excellent conductivity and transparency, and further having excellent moisture resistance, and to provide a process for producing the same. <P>SOLUTION: Disclosed is a ZnO vapor deposition material for use in the deposition of a transparent conductive film. It consists mainly of a porous ZnO sinter which contains La as a first additive element and a second additive element(s). The second additive element(s) is one or more kinds of elements selected from the group consisting of B, Al, Ga and S. The content of La is in the range of 0.1 to 14.9 mass% and the content of the second additive element(s) is in the range of 0.1 to 10 mass%, and the content of La is higher than that of the second additive element(s). The sinter has a porosity of 3 to 50%. Preferably, the total content of La as the first additive element and the second additive element(s) is 0.2 to 15 mass%, the average pore size is 0.1 to 500 μm, and the average crystal grain size is 1 to 500 μm. Also disclosed is a process for producing the same. <P>COPYRIGHT: (C)2009,JPO&INPIT |
