| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the problems of the performance improving technique of microphotofabrication using far-ultraviolet light, particularly ArF excimer laser light of 193 nm wavelength, specifically to provide a negative resist composition which, even in fine pattern formation, avoids pattern collapse and exhibits good resolution. <P>SOLUTION: The negative resist composition includes (A) an alkali-soluble resin, (B) a compound having a conjugated diene structure, and (C) a photo-cationic polymerization initiator. <P>COPYRIGHT: (C)2009,JPO&INPIT |
