| 发明名称 |
INTEGRATED CIRCUIT DEVICE AND METHOD |
| 摘要 |
An integrated circuit device includes a semiconductor chip with a metallization layer on the chip. A gas-phase deposited insulation layer is disposed on the metallization layer. |
| 申请公布号 |
US2009115060(A1) |
申请公布日期 |
2009.05.07 |
| 申请号 |
US20070933459 |
申请日期 |
2007.11.01 |
| 申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
MAHLER JOACHIM;BEHRENS THOMAS;GALESIC IVAN |
| 分类号 |
H01L23/52;H01L21/44 |
主分类号 |
H01L23/52 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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