HIGH-INJECTION HETEROJUNCTION BIPOLAR TRANSISTOR

摘要

A method for manufacturing high-injection heterojunction bipolar transistor capable of being used as a photonic device is disclosed. A sub-collector layer is formed on a substrate. A collector layer is then deposited on top of the sub-collector layer. After a base layer has been deposited on top of the collector layer, a quantum well layer is deposited on top of the base layer. An emitter is subsequently formed on top of the quantum well layer.