HYBRID ORIENTATION SEMICONDUCTOR STRUCTURE WITH REDUCED BOUNDARY DEFECTS AND METHOD OF FORMING SAME

摘要

The present invention provides an improved amorphization/templated recrystallization (ATR) method for forming hybrid orientation substrates and semiconductor device structures. A direct-silicon-bonded (DSB) silicon layer having a (011) surface crystal orientation is bonded to a base silicon substrate having a (001) surface crystal orientation to form a DSB wafer in which in-plane <110> direction of the (011) DSB layer is aligned with in-plane <110> direction of the (001) base substrate. Selected regions of the DSB layer are amorphized down to the base substrate to form amorphized regions aligned with the mutually orthogonal in-plane <100> directions of the (001) base substrate, followed by recrystallization using the base substrate as a template. This arrangement of DSB layer, base substrate, and amorphized region orientation provides a near- vertical, essentially defect-free boundary between original-orientation and changed-orientation silicon regions, enabling complete boundary region removal with smaller footprint shallow trench isolation than possible with other ATR methods.