NONVOLATILE STORAGE DEVICE AND NONVOLATILE DATA RECORDING MEDIUM

摘要

It is possible to provide a nonvolatile storage device and a nonvolatile data recording medium having a nonvolatile storage element having a resistance changed by application of an electric pulse. The nonvolatile storage device includes: a first write-in circuit (106) which performs a first write-in process by applying a first electric pulse to a nonvolatile storage element so that a resistance value of the nonvolatile storage element changes from a first resistance value to a second resistance value, and by applying a second electric pulse having an inverse polarity as compared to the first electric pulse so that the resistance value changes from the second resistance value to the first resistance value; and a second write-in circuit (108) which performs a second write-in process by applying a third electric pulse to the nonvolatile storage element so that the resistance value of the nonvolatile storage element changes from a third resistance value to a fourth resistance value, and by applying a fourth electric pulse having the same polarity as the third electric pulse so that the resistance value changes from the fourth resistance value to a fifth resistance value.