| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve polishing accuracy of an SiC wafer by preventing wafer guides arranged on a wafer holding table from being polished. <P>SOLUTION: In the wafer holding table 10, the wafer guides 13 holding a SiC wafer 20 are each composed of a first guide part 13a and a second guide part 13b. Single-crystal SiC where the plane orientation of a surface of the second guide part 13b facing at least polishing cloth among the wafer guide 13 is a 0001-plane, or having a plane inclined ≤1° from the 0001-plane is used. <P>COPYRIGHT: (C)2009,JPO&INPIT |
