| 摘要 |
Provided is an image sensor and a method for manufacturing the same. The image sensor includes a substrate on which a circuitry including a first lower metal line and a second lower metal line is formed. A lower electrode is formed on the first lower metal line. A separation metal pattern surrounds the lower electrode and connected to the second lower metal line. An intrinsic layer is formed on the lower electrode. A second conductive type conduction layer is formed on the intrinsic layer. An upper electrode is formed on the second conductive type conduction layer. A bias can be applied to the second lower metal line such that the separation metal pattern can provide a Schottky Barrier, directing electrons to the lower electrode and inhibiting crosstalk between pixels.
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