| 摘要 |
A method of manufacturing a semiconductor light emitting device using surface plasmon resonance is provided to minimize damage to a corrugated structure for surface plasmon resonance by separating a concave part of the corrugated structure from an active layer by a predetermined distance. A method of manufacturing a semiconductor light emitting device using surface plasmon resonance includes the steps of: preparing a substrate(11) for growing a mono-crystalline; growing a first conductive semiconductor layer(13), an active layer(14), and a second conductive semiconductor layer(15) on the substrate sequentially; forming a regularly corrugated structure by etching an upper surface of the second semiconductor layer selectively; wet-etching a damaged region within the upper surface of the second conductive semiconductor layer to remove the damaged region; and forming a metal layer(16) on the second conductive semiconductor layer. During formation of the corrugated structure, a concave part of the corrugated structure is separated from the active layer to excite surface plasmon existing on the metal layer with lights emitted from the active layer. The excited plasmon is emitted in an active layer direction. |
