发明名称 Compositons and processes for immersion lithography
摘要 New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprises two or more distinct materials that can be substantially non-mixable with a resin component of the resist. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.
申请公布号 US2009117489(A1) 申请公布日期 2009.05.07
申请号 US20080290980 申请日期 2008.11.05
申请人 ROHM AND HAAS ELECTRONICS MATERIALS LLC 发明人 WANG DEYAN;XU CHENG-BAI;BARCLAY GEORGE G.
分类号 G03F7/20;G03F7/004 主分类号 G03F7/20
代理机构 代理人
主权项
地址