发明名称 |
Compositons and processes for immersion lithography |
摘要 |
New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprises two or more distinct materials that can be substantially non-mixable with a resin component of the resist. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.
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申请公布号 |
US2009117489(A1) |
申请公布日期 |
2009.05.07 |
申请号 |
US20080290980 |
申请日期 |
2008.11.05 |
申请人 |
ROHM AND HAAS ELECTRONICS MATERIALS LLC |
发明人 |
WANG DEYAN;XU CHENG-BAI;BARCLAY GEORGE G. |
分类号 |
G03F7/20;G03F7/004 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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地址 |
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