| 摘要 |
In a semiconductor storage device, such as a dynamic random access memory (DRAM), in which dynamic data is amplified and read on a bit line, a data line sense amplifier/write buffer connected to a data line of a memory array and a data line sense amplifier control signal generating logic circuit connected to a dummy data line of a dummy memory array are provided. A sense amplifier is activated in accordance with an output signal of the logic circuit.
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