发明名称 Polishing slurry for metal, and polishing method
摘要 A polishing slurry for metal comprises an oxidizer, a metal oxide dissolving agent, a metal inhibitor, and water, wherein the metal inhibitor is at least one of a compound having an amino-triazole skeleton and a compound having an imidazole skeleton. The use of the polishing slurry for metal makes it possible to raise the polishing speed sufficiently while keeping the etching speed low, restrain the generation of corrosion of the surface of a metal and dishing, and form a metal-film-buried pattern having a high reliability in the process of formation of wiring of semiconductor devices.
申请公布号 US2009117829(A1) 申请公布日期 2009.05.07
申请号 US20080318376 申请日期 2008.12.29
申请人 HITACHI CHEMICAL CO., LTD. 发明人 ONO HIROSHI;MASUDA KATSUYUKI;HABIRO MASANOBU
分类号 B24B1/00;B24B29/00;B24B37/00;B24B37/04;C09G1/02;C09K3/00;C09K13/00;C23F3/00;C23F3/06;H01L21/304;H01L21/306;H01L21/321 主分类号 B24B1/00
代理机构 代理人
主权项
地址