发明名称 |
CHREINEN SILICIUMCARBID-KRISTALLEN |
摘要 |
A method is disclosed for producing high quality semi-insulating silicon carbide crystals in the absence of relevant amounts of deep level trapping elements. The invention includes the steps of heating a silicon carbide crystal having a first concentration of point defect related deep level states to a temperature above the temperatures required for CVD growth of silicon carbide from source gases, but less than the sublimation temperature of silicon carbide under the ambient conditions to thereby thermodynamically increase the number of point defects and resulting states in the crystal, and then cooling the heated crystal to approach room temperature at a sufficiently rapid rate to maintain a concentration of point defects in the cooled crystal that remains greater than the first concentration. |
申请公布号 |
DE60326843(D1) |
申请公布日期 |
2009.05.07 |
申请号 |
DE2003626843 |
申请日期 |
2003.06.10 |
申请人 |
CREE INC. |
发明人 |
JENNY, JASON RONALD;MALTA, DAVID PHILLIP;HOBGOOD, HUDSON MCDONALD;MUELLER, STEPHAN GEORG |
分类号 |
H01L21/205;H01L21/324;C30B29/36;C30B33/00;C30B33/02 |
主分类号 |
H01L21/205 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|