A PLASMA ENHANCED ATOMIC LAYER DEPOSITION SYSTEM AND METHOD
摘要
A plasma enhanced atomic layer deposition (PEALD) method and system, the system including a process chamber and a substrate holder provided within the processing chamber and configured to support a substrate on which a predetermined film will be formed. A first process material supply system is configured to supply a first process material to the process chamber, and a second process material supply system configured to supply a second process material to the process chamber in order to provide a reduction reaction with the first process material to form the predetermined film on the substrate. Also included is a power source configured to couple electromagnetic power to the process chamber to generate a plasma within the process chamber to facilitate the reduction reaction, and a chamber component exposed to the plasma and made from a film compatible material that is compatible with the predetermined film deposited on the substrate.
申请公布号
WO2006104921(A3)
申请公布日期
2009.05.07
申请号
WO2006US10870
申请日期
2006.03.24
申请人
TOKYO ELECTRON LIMITED;FAGUET, JACQUES;CERIO, FRANK, M., JR.;MATSUDA, TSUKASA;YAMAMOTO, KAORU
发明人
FAGUET, JACQUES;CERIO, FRANK, M., JR.;MATSUDA, TSUKASA;YAMAMOTO, KAORU