发明名称 A PLASMA ENHANCED ATOMIC LAYER DEPOSITION SYSTEM AND METHOD
摘要 A plasma enhanced atomic layer deposition (PEALD) method and system, the system including a process chamber and a substrate holder provided within the processing chamber and configured to support a substrate on which a predetermined film will be formed. A first process material supply system is configured to supply a first process material to the process chamber, and a second process material supply system configured to supply a second process material to the process chamber in order to provide a reduction reaction with the first process material to form the predetermined film on the substrate. Also included is a power source configured to couple electromagnetic power to the process chamber to generate a plasma within the process chamber to facilitate the reduction reaction, and a chamber component exposed to the plasma and made from a film compatible material that is compatible with the predetermined film deposited on the substrate.
申请公布号 WO2006104921(A3) 申请公布日期 2009.05.07
申请号 WO2006US10870 申请日期 2006.03.24
申请人 TOKYO ELECTRON LIMITED;FAGUET, JACQUES;CERIO, FRANK, M., JR.;MATSUDA, TSUKASA;YAMAMOTO, KAORU 发明人 FAGUET, JACQUES;CERIO, FRANK, M., JR.;MATSUDA, TSUKASA;YAMAMOTO, KAORU
分类号 H01L21/00;H01L21/31;H01L21/322 主分类号 H01L21/00
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