COMPOSITION, METHOD AND PROCESS FOR POLISHING A WAFER
摘要
<p>A composition for use in polishing a wafer is disclosed. The composition includes an aqueous solution of initial components substantially free of loose abrasive particles and having a pH in the range of about 2 to 7, the aqueous solution including at least one polyelectrolyte and a surfactant. In certain embodiments, the wafer polishing composition can be adjusted to control cut rate and selectivity for modifying semiconductor wafers using a fixed abrasive Chemical Mechanical Polishing (CMP) process. Also disclosed is a CMP method and a process for polishing a wafer using the polishing composition.</p>
申请公布号
WO2009058463(A1)
申请公布日期
2009.05.07
申请号
WO2008US74199
申请日期
2008.08.25
申请人
3M INNOVATIVE PROPERTIES COMPANY;LI, NAICHAO;GAGLIARDI, JOHN J.;CLARK, PHILIP G.;SAVU, PATRICIA M.
发明人
LI, NAICHAO;GAGLIARDI, JOHN J.;CLARK, PHILIP G.;SAVU, PATRICIA M.