| 摘要 |
<p>An insulated-gate field-effect transistor (100, 100V, 140, 150, 150V, 160, 170, 170V, 180, 180V, 190, 210, 210W, 220, 220U, 220V, 220W, 380, 480, 500, 510, 530, or 540) has a hypoabrupt vertical dopant profile below one (104, 264, or 564) of its source/drain zones for reducing the parasitic capacitance along the pn junction between that source/drain zone and adjoining body material (108, 268, or 568). In particular, the concentration of semiconductor dopant which defines the conductivity type of the body material increases by at least a factor of 10 in moving from that source/drain zone down to an underlying body-material location no more than 10 times deeper below the upper semiconductor surface than that source/drain zone. The body material preferably includes a more heavily doped pocket portion (120, 280, or 580) situated along the other source/drain zone (102, 262, or 562). The combination of the hypoabrupt vertical dopant profile below the first- mentioned source/drain zone, normally serving as the drain, and the pocket portion along the second- mentioned source/drain zone, normally serving as the source, enables the resultant asymmetric transistor to be especially suitable for high-speed analog applications.</p> |
