| 摘要 |
PROBLEM TO BE SOLVED: To provide a low-cost and low-loss semiconductor device; and to provide a method of manufacturing a semiconductor device. SOLUTION: The semiconductor device 101 includes, on a substrate 1, an element region 51 with a semiconductor element formed therein, and a terminal region 52 surrounding the element region 51. The semiconductor device 101 includes: a plurality of first conductive guard ring layers 2 surrounding the element region 51, annularly formed, and diffused in the depth direction in the terminal region 52; first interlayer dielectrics 3 formed to be embedded in the substrate 1 between the adjacent guard ring layers 2; and second interlayer dielectrics 11 formed on the surface of the substrate 1 from the element region 51 to the terminal region 52. The surface of the substrate 1 in the terminal region 52 and the surface of the substrate 1 in the element region 51 are formed in a planar form together, and the upper surface of the second interlayer dielectric 11 is formed flush with the substrate 1. COPYRIGHT: (C)2009,JPO&INPIT |
