发明名称 |
METHOD FOR CORRECTING DEFECT OF PHOTOMASK, MANUFACTURING METHOD, AND DEFECT CORRECTION DEVICE |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for correcting a defect of a photomask capable of acquiring an excellent cross-sectional shape at the edge part of a pattern of an absorption layer or a light blocking layer after dark defect correction, a method for manufacturing a photomask using it, and a photomask defect correction device for performing the method. <P>SOLUTION: A method for correcting a defect of a substrate and a photomask comprising an absorption layer or a light blocking layer that is formed on the substrate in a pattern, and contains a metal or an alloy of which etching speed is faster than that of an oxidative product of the metal or the alloy, includes an oxidization process for oxidizing the surface and the lateral side of the portion of the dark defect due to the redundancy in the absorption layer or the light blocking layer to form an oxide film, and an etching process for dry-etching the dark defect portion in a manner to etch only the oxide film. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
申请公布号 |
JP2009098369(A) |
申请公布日期 |
2009.05.07 |
申请号 |
JP20070269322 |
申请日期 |
2007.10.16 |
申请人 |
DAINIPPON PRINTING CO LTD;HOYA CORP |
发明人 |
AMANO TAKESHI;USUI YOICHI |
分类号 |
G03F1/24;G03F1/72;G03F1/74;H01L21/027 |
主分类号 |
G03F1/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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