| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile memory device including a sensing transistor having a high critical voltage. <P>SOLUTION: The nonvolatile memory device includes at least one string including a plurality of memory cell transistors connected in series, at least one bit line corresponding to the at least one string, and a sensing transistor including a gate for sensing the voltage of the bit line and the high critical voltage. The critical voltage of the sensing transistor is lower than a voltage applied to a read bit line connected to a memory cell transistor to be read, and higher than a voltage obtained by reducing a predetermined voltage from the voltage applied to the read bit line. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
