| 摘要 |
PROBLEM TO BE SOLVED: To allow a post pattern to be transcribed while accurately controlling the bidirectional size in a manufacturing process of an MTJ element for an STT-MRAM. SOLUTION: A hard mask spacer layer and a hard mask layer are formed on an MTJ element, and a first parallel line pattern (first photoresist film) of a first size width is formed on the hard mask layer. This is transferred as a mask on the hard mask layer to form a parallel hard mask line (first etching). On the parallel hard mask line and the hard mask spacer layer, a second parallel line pattern (second photoresist film) is formed which intersects with the parallel hard mask line and has a second size width for transcription on the hard mask layer (second etching). A size-controlled post region is formed by such an arrangement. Many MTJ elements are formed by transcribing the post region on each layer lower than the mask spacer layer (third etching). COPYRIGHT: (C)2009,JPO&INPIT |
