发明名称 INFRARED SENSOR UNIT AND PROCESS OF FABRICATING THE SAME
摘要 An infrared sensor unit has a thermal infrared sensor and an associated semiconductor device commonly developed on a semiconductor substrate. A dielectric top layer covers the substrate to conceal the semiconductor device formed in the top surface of the substrate. The thermal infrared sensor carried on a sensor mount which is supported above the semiconductor device by means of a thermal insulation support. The sensor mount and the support are made of a porous material which is superimposed on top of the dielectric top layer.
申请公布号 US2009114819(A1) 申请公布日期 2009.05.07
申请号 US20060063850 申请日期 2006.08.16
申请人 YAMANAKA HIROSHI;ICHIHARA TSUTOMU;WATABE YOSHIFUMI;TSUJI KOJI;KIRIHARA MASAO;YOSHIHARA TAKAAKI;NISHIJIMA YOICHI;HYODO SATOSHI 发明人 YAMANAKA HIROSHI;ICHIHARA TSUTOMU;WATABE YOSHIFUMI;TSUJI KOJI;KIRIHARA MASAO;YOSHIHARA TAKAAKI;NISHIJIMA YOICHI;HYODO SATOSHI
分类号 H01L27/14;H01L21/00 主分类号 H01L27/14
代理机构 代理人
主权项
地址