| 摘要 |
A semiconductor device and a method for fabricating the same are disclosed, which are capable of improving the performance and the production yield of the device. The semiconductor device may include a semiconductor wafer having semiconductor chips thereon, a lower metal layer on the semiconductor wafer, a dielectric layer on the lower metal layer, upper conductive layers on the dielectric layer, separated into a plurality of pieces; and a passivation layer enclosing lateral sides of the pieces of the upper conductive layer. Accordingly, when dicing and separating the respective chips on the semiconductor wafer, the upper metal layer does not lift off the dielectric layer. Therefore, the performance and the production yield of the semiconductor device can be enhanced. |
