NITRIDE SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a nitride semiconductor element whose rise in temperature by self-heating can be suppressed. SOLUTION: The nitride semiconductor element comprises a substrate 1, and a nitride semiconductor laminate structure portion 2 formed by laminating an n+-type GaN layer 3, an n--type GaN layer 4, a p-type GaN layer 5, and an n+-type GaN layer 6 in order. The nitride semiconductor laminate structure portion 2 has a trench 8 formed. A gate electrode 11 is formed on a wall surface 9 of the trench 8 with a gate insulating film 10 interposed therebetween. A source electrode 17 is in ohmic contact with the n+-type GaN layer 6. Further, a drain electrode 18 is in ohmic contact with the other surface of the substrate 1. A first heat conductor 7 exposed on a side surface of the nitride semiconductor laminate structure portion is formed between the n--type GaN layer 4 and p-type GaN layer 5. In a through-hole 14 formed in the nitride semiconductor laminate structure portion 2, a second heat conductor 15 is buried, and in contact with the p-type GaN layer 5 and n+-type GaN layer 6. COPYRIGHT: (C)2009,JPO&INPIT