发明名称 Controlling a memory device responsive to degradation
摘要 Embodiments of the present invention disclosed herein include devices, systems and methods, such as those directed to non-volatile memory devices and systems capable of determining a degradation parameter associated with one or more memory cells. Disclosed devices and systems according to embodiments of the present invention include those that utilize the degradation parameter to adjust control signals coupled to the memory cells.
申请公布号 US2009116283(A1) 申请公布日期 2009.05.07
申请号 US20070983241 申请日期 2007.11.07
申请人 MICRON TECHNOLOGY, INC. 发明人 HA CHANG WAN;GHODSI RAMIN
分类号 G11C16/04 主分类号 G11C16/04
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