| 摘要 |
There is provided a semiconductor device including: a first field effect transistor region including a gate insulating film, a gate electrode and gate sidewalls formed in a P channel forming region; and a second field effect transistor region including a gate insulating film, a gate electrode and gate sidewalls formed in an N channel forming region on a semiconductor substrate, wherein in the first and second field effect transistor regions, the gate electrodes are composed primarily of a silicide of metal M represented as M(x)Si(1-x)(0<x<1) and satisfy t1-t2<L/2, wherein the height of the gate electrodes is t1, the height of the gate sidewalls is t2 and the gate length of the gate electrodes is L; and the height of the gate electrode in the P channel forming region is greater than the height of the gate electrode in the N channel forming region.
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