发明名称 |
Methods of forming a conductive pattern in semiconductor devices and methods of manufacturing semiconductor devices having a conductive pattern |
摘要 |
In a method of forming a conductive pattern in a semiconductor device, a conductive layer including a metal is formed on a substrate. A mask including carbon is provided on the conductive layer, and the conductive pattern is formed on the substrate by etching the conductive layer using the mask as an etching mask. The mask is removed from the conductive pattern by an oxygen plasma ashing process. An oxidized portion of the conductive pattern is reduced. The conductive pattern may have a desired resistance by reducing the oxidized portion to improve electrical characteristics and reliability of the semiconductor device.
|
申请公布号 |
US2009117723(A1) |
申请公布日期 |
2009.05.07 |
申请号 |
US20080287945 |
申请日期 |
2008.10.15 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM JONG-KYU;KIM BUM-SOO;SONG JONG-HEUI;JEONG SANG-SUP;CHOI SUNG-GIL;YOON KUK-HAN |
分类号 |
H01L21/28;H01L21/283 |
主分类号 |
H01L21/28 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|