发明名称 |
ION IMPLANTATION MASK AND METHOD FOR MANUFACTURING ION IMPLANTATION MASK THEREFOR |
摘要 |
<p>A method of forming an ion implantation mask includes forming a field area on a semiconductor substrate, forming an amorphous carbon layer on the semiconductor substrate, forming a hard mask layer on the amorphous carbon layer, forming an etching mask pattern on the hard mask layer, and etching the hard mask layer and the amorphous carbon layer to expose the field area through the etching mask pattern, wherein etching the hard mask layer and the amorphous carbon layer forms a hard mask layer pattern and an amorphous carbon layer pattern.</p> |
申请公布号 |
KR20090044810(A) |
申请公布日期 |
2009.05.07 |
申请号 |
KR20070111067 |
申请日期 |
2007.11.01 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, YONG WOO;LEE, YOUNG MI;CHAE, MIN CHUL;KIM, DAE JOUNG;HWANG, JAE SEUNG |
分类号 |
H01L21/027;H01L21/265 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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