发明名称 |
NON-VOLATILE MEMORY DEVICE HAVING CHARGE TRAPPING LAYER AND METHOD OF FABRICATING THE SAME |
摘要 |
<p>Disclosed herein are a non-volatile memory device and a method of manufacturing the same. The non-volatile memory device includes a substrate, a tunneling layer disposed on the substrate, a charge trapping layer disposed on the tunneling layer, a blocking layer disposed on the charge trapping layer, and a control gate electrode disposed on the blocking layer. The blocking layer in contact with the charge trapping layer includes an aluminum nitride layer.</p> |
申请公布号 |
KR20090044398(A) |
申请公布日期 |
2009.05.07 |
申请号 |
KR20070110484 |
申请日期 |
2007.10.31 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
JOO, MOON SIG;PARK, KI SEON;KIM, YONG TOP;PARK, JAE YOUNG;LEE, KI HONG |
分类号 |
H01L27/115;H01L21/8247 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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