| 摘要 |
A thin-film photovoltaic conversion device, formed on a substrate, preferably made of a flexible plastic, having first and second conductive layers as electrodes, n-type and p-type layers, graded (varizone) band gap layer including pure silicon and silicon in chemical compositions selected from a group, consisting of SixGe1-x, SixCy, SixNy and SixOyNz, all these chemical compositions being simultaneously comprised in graded band gap layer and smoothly changing from one to the other. The photovoltaic device additionally comprises reflective layer, an anti-reflective layer and a protective laminating layer. The device is manufactured on the basis of at least one vacuum chamber according to two embodiments of proposed method.
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