| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which has an FWD element built in an IGBT element and can suppress an increase in forward loss of the FWD element. <P>SOLUTION: A semiconductor substrate of a first conductivity type has a main region and a sense region, the FWD element being formed integrally with the IGBT element in the main region. The FWD element has a base region of a second conductivity type selectively formed in a first principal-surface side surface layer of the semiconductor substrate and constituting the IGBT element, a semiconductor substrate, and a cathode region of the first conductivity type formed in a region of a second principal-surface side surface layer of the semiconductor substrate except a collector region of the second conductivity type constituting the IGBT element. In the sense region, a sense element dedicated to FWD is formed which has an anode region of the second conductivity type formed selectively in the first principal-surface side surface layer of the semiconductor substrate and the semiconductor substrate and where a current proportional to a current flowing to the FWD element flows. <P>COPYRIGHT: (C)2009,JPO&INPIT |
