| 摘要 |
A semiconductor device includes a semiconductor layer with an impurity of a first conductivity type diffused therein, and a local insulating layer, source layer, and a drain layer formed therein. The drain layer has an impurity of a second conductivity type opposite to the first conductivity type. A gate electrode is formed over the semiconductor layer extending from over the local insulating layer to the source layer. A low-concentration diffusion layer is formed in the semiconductor layer below the drain layer. First and second gate insulating films are formed between the gate electrode and the semiconductor layer, and respectively extending from an end, on the source layer side, of the gate electrode to the local insulating layer without reaching the local insulating layer, and extending from an end on another side of the local insulting layer to the source layer.
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