| 摘要 |
A semiconductor light-emitting diode 20 is provided with a silicon single crystal substrate 201, an intervening layer 203 formed of a Group III nitride semiconductor and stacked on the silicon single crystal substrate 201, and a light-emitting part (205, 206, 207) formed with a p-n-junction hetero-junction structure and stacked on the intervening layer 203. The intervening layer 203 is formed of an aluminum-containing Group III nitride semiconductor. The intervening layer 203 and the light-emitting part (205, 206, 207) have interposed therebetween a superlattice structure 204 formed of a plurality of Group III nitride semiconductor layers that contain aluminum and have mutually different aluminum composition ratios. A DBR film formed of the superlattice structure 204 is enabled to excel in reflectance and enhance the light-emitting property.
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