| 摘要 |
In a method for laterally dividing a semiconductor wafer (1), a growth substrate (2) is provided, onto which is grown a semiconductor layer sequence (3) comprising a layer provided as a separating layer (4) and at least one functional semiconductor layer (5) which succeeds the separating layer (4) in the growth direction. Afterward, ions are implanted into the separating layer (4) through the functional semiconductor layer (5), and the semiconductor wafer is divided along the separating layer (4), a part (1a) of the semiconductor wafer (1) which contains the growth substrate (2) being separated.
|
