发明名称 |
MAGNETIC DEVICES HAVING STABILIZED FREE FERROMAGNETIC LAYER OR MULTILAYERED FREE FERROMAGNETIC LAYER |
摘要 |
Magnetic multilayer structures, such as magnetic or magnetoresistive tunnel junctions (MTJs) and spin valves, having a magnetic biasing layer formed next to and magnetically coupled to the free ferromagnetic layer to achieve a desired stability against fluctuations caused by, e.g., thermal fluctuations and astray fields. Stable MTJ cells with low aspect ratios can be fabricated using CMOS processing for, e.g., high-density MRAM memory devices and other devices, using the magnetic biasing layer. Such multilayer structures can be programmed using spin transfer induced switching by driving a write current perpendicular to the layers. Each free ferromagnetic layer can include two or more layers and may be a multilayered free ferromagnetic stack that includes first and second ferromagnetic layers and a non-magnetic spacer between the first and second ferromagnetic layers. |
申请公布号 |
WO2007035786(A3) |
申请公布日期 |
2009.05.07 |
申请号 |
WO2006US36572 |
申请日期 |
2006.09.19 |
申请人 |
GRANDIS INC.;HUAI, YIMING;DIAO, ZHITAO;CHEN, EUGENE, YOUJUN |
发明人 |
HUAI, YIMING;DIAO, ZHITAO;CHEN, EUGENE, YOUJUN |
分类号 |
G11C11/15 |
主分类号 |
G11C11/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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