发明名称 SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME
摘要 <p>A light emitting element (10) is provided with a thin film crystal layer which includes a buffer layer (22), a first conductivity type semiconductor layer, an active structure (25) and a second conductivity type semiconductor layer. In the thin film crystal layer, at least a part of the second conductivity type semiconductor layer is covered with an insulating film. The insulating film has a crystal quality improving layer (30) for recovering crystallinity of the thin film crystal layer.</p>
申请公布号 WO2009057655(A1) 申请公布日期 2009.05.07
申请号 WO2008JP69682 申请日期 2008.10.29
申请人 MITSUBISHI CHEMICAL CORPORATION;HORIE, HIDEYOSHI;HIRASAWA, HIROHIKO 发明人 HORIE, HIDEYOSHI;HIRASAWA, HIROHIKO
分类号 H01L33/44 主分类号 H01L33/44
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