发明名称 |
SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
<p>A light emitting element (10) is provided with a thin film crystal layer which includes a buffer layer (22), a first conductivity type semiconductor layer, an active structure (25) and a second conductivity type semiconductor layer. In the thin film crystal layer, at least a part of the second conductivity type semiconductor layer is covered with an insulating film. The insulating film has a crystal quality improving layer (30) for recovering crystallinity of the thin film crystal layer.</p> |
申请公布号 |
WO2009057655(A1) |
申请公布日期 |
2009.05.07 |
申请号 |
WO2008JP69682 |
申请日期 |
2008.10.29 |
申请人 |
MITSUBISHI CHEMICAL CORPORATION;HORIE, HIDEYOSHI;HIRASAWA, HIROHIKO |
发明人 |
HORIE, HIDEYOSHI;HIRASAWA, HIROHIKO |
分类号 |
H01L33/44 |
主分类号 |
H01L33/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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