SEMICONDUCTOR LASER DEVICE

摘要

A semiconductor laser device has a layered structure containing an MQW activated layer (5) formed by a semiconductor nitride of an element belonging to Group-III on a main surface of a substrate (1). The layered structure has a stripe-shaped waveguide formed on its main surface and one of the opposing end faces of the waveguide is a light emitting end face. Around a concave portion (2) are formed a first region having an inhibited bandwidth Eg1 in the MQW activated layer (5) and a second region adjacent to the first region and having an inhibited bandwidth Eg2 (Eg2 is not equal to Eg1) in the MQW activated layer (5). The waveguide is formed to contain the first region and the second region and not to contain a stepped region. The light emission end is formed in a region (5a) of the first and the second region where the light absorption wavelength is short.