COMPOSITION FOR FORMING RESIST UNDERLAYER FILM AND METHOD OF FORMING RESIST PATTERN FROM THE SAME

摘要

[PROBLEMS] To provide a composition for forming a resist underlayer film which attains a wide choice of dry-etching rates and has desired values of k and refractive index (n) at short wavelengths, such as that of an ArF excimer laser. [MEANS FOR SOLVING PROBLEMS] The composition for forming a resist underlayer film for lithography comprises a linear polymer and a solvent, the backbone of the linear polymer having a unit structure formed by introducing 2,4-dihydroxybenzoic acid through an ester linkage and an ether linkage.