TRENCH GATE MOSFET AND METHOD OF MANUFACTURING THE SAME
摘要
<p>A Trench gate MOS field-effect transistor having a narrow, lightly doped, region extending from a channel accomodating region (3) of same conductivity type immediately adjacent the trench sidewall. The narrow region may be self-aligned to the top of a lower polysilicon shield region in the trench or may extend the complete depth of the trench. The narrow region advantageously relaxes the manufacturing tolerances, which otherwise require close alignment of the upper polysilicon trench gate to the body-drain junction.</p>
申请公布号
WO2009057015(A1)
申请公布日期
2009.05.07
申请号
WO2008IB54355
申请日期
2008.10.22
申请人
NXP B.V.;PEAKE, STEVEN, THOMAS;RUTTER, PHILIP;ROGERS, CHRISTOPHER;DROBNIS, MIRON;BUTLER, ANDREW
发明人
PEAKE, STEVEN, THOMAS;RUTTER, PHILIP;ROGERS, CHRISTOPHER;DROBNIS, MIRON;BUTLER, ANDREW