| 摘要 |
A method of manufacturing a semiconductor device including a sputtering process for forming a barrier film mainly having tantalum or tantalum nitride on an interlayer insulator formed by sputtering using a xenon gas. The sputtering process may include a step of forming one barrier film mainly composed of tantalum nitride on a substrate by sputtering using a xenon gas by applying a RF bias, and a step for forming another barrier film mainly composed of tantalum on the first barrier film by sputtering using a xenon gas without applying the RF bias. The barrier film may be formed by changing the RF bias continuously, and forming the interlayer insulator side by applying the RF bias, and forming the wiring side without applying the RF bias. |
