| 摘要 |
A metallic film 43 that becomes the matrix of pad 32 is formed on semiconductor substrate 41. Next, through hole 31 is formed in the semiconductor substrate 41 facing the metallic film 43 at the portion corresponding to an area where the pad 32 is formed. Thereafter, penetration electrode 17 is formed in through hole 31. Next, penetration portion 49 to expose the side of the penetration electrode 17 is formed in the semiconductor substrate 41. Next, an insulative member 16 is formed to be filled up in at least the penetration portion 49. After that, the pad 32 is formed by patterning the metallic film 43.
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