| 摘要 |
A high frequency diode comprising: a P type region, a N type region, and an I layer as a high resistivity layer interposed between the P type region and the N type region, wherein the I layer is made of a silicon wafer that has a carbon concentration of 5x1015 to 5x1017 atoms/cm3 interstitial oxygen concentration of 6.5x1017 to 13.5x1017 atoms/cm3, and a resistivity of 100 Omegacm or more.
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