| 摘要 |
<P>PROBLEM TO BE SOLVED: To easily emit multiple-wavelength light under a simple configuration by using the only light emitting layer constituted of a III group nitride semiconductor layer independently. <P>SOLUTION: In the III group nitride semiconductor light emitting device having a substrate and a light emitting layer 10 in a multiple quantum well structure provided with barrier layers 11b and 12b composed of a III group nitride semiconductor provided on the surface of the substrate and well layers 11a and 12a composed of an indium-containing III group nitride semiconductor, the light emitting layer 10 is composed by being provided with one unit stratified part 11m comprising the well layer 11a and the barrier layer 11b or by laminating a plurality of stratified parts 11 and 12 composed by laminating at least two of the unit stratified parts 12m, the layer thickness and composition of the well layers of each other or the barrier layers of each other are respectively the same when there are at least two unit stratified parts 12m in the stratified part 12, and the layer thicknesses of the barrier layers 11b and 12b of the unit stratified parts of the stratified parts 11 and 12 are different. <P>COPYRIGHT: (C)2009,JPO&INPIT |
