TARGET STRUCTURE AND TARGET HOLDING APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a target structure which enables sputtering of gallium or gallium-containing material in a molten state even when the film deposition rate is increased by increasing the input electric power and a sputtering apparatus including such a target structure.

SOLUTION: The target structure constituted by arranging the gallium or gallium-containing material on the holding section of a metal material is characterized in that a thin film having a contact angle of not more than 30° to the gallium or gallium-containing material in a molten state is formed on the surface of the holding section corresponding to the interface with the gallium or gallium-containing material. The sputtering apparatus includes the target structure.

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