| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a thin-film semiconductor device, capable of suppressing the generation of cracks and chipping of a thin-film circuit layer and of cutting the thin-film semiconductor device into segmented pieces. SOLUTION: This method for manufacturing the thin-film semiconductor device formed with the thin-film circuit layer 6 in a resin substrate 5 includes: a thin-film circuit layer forming process for forming the thin-film circuit layer 6, having a plurality of element regions in the resin substrate 5; and a cutting process for cutting each of the plurality of element regions to cut the thin-film semiconductor device into segmented pieces as one thin-film semiconductor device. In the cutting process, the resin substrate 5 is cut by an outer peripheral part 30a of a dicing blade 30, having an abrasive grain diameter that exceeds 10μm, and the thin-film circuit layer 6 is cut by an inner peripheral part 30b of the dicing blade 30, having an abrasive grain diameter of 10μm or smaller. COPYRIGHT: (C)2009,JPO&INPIT
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