| 摘要 |
PROBLEM TO BE SOLVED: To provide an electronic switch having a high speed and low resistance. SOLUTION: A p-type semiconductor substrate or a film is used as an A film; a n-type or an i-type semiconductor film is formed on it to use the film as a B film; a p-type semiconductor film is formed on it to use the film as a C film; a n-type semiconductor film is formed on part of the C film to use it as a D film; and an insulating material film is formed so as to come into contact with the C film and the D film, and a conductive film is formed on the insulating material layer to use the conductive film as a gate electrode. The conductive film is brought into contact with the A film to use it as a collector electrode. The conductive film is brought into contact with the D film to use it as an emitter electrode. In the electronic switch, a potential difference between the emitter electrode and the gate electrode is fluctuated to change impedance between the collector electrode and the emitter electrode. The lifetime of a minority carrier in part of the region of the A film having a distance of ≥10 nm as a distance from the bonded faces of the A film and the B film is set to ≤1/100, or ≤50 ns in comparison with the B film. COPYRIGHT: (C)2009,JPO&INPIT
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