METHOD FOR FORMING SILICON DOTS

摘要

A method for forming silicon dots capable of forming silicon dots with good controllability of silicon dot particle diameters according to the particle diameters of silicon dots to be formed at a relatively low temperature. A method for forming silicon dots comprises the steps of applying high-frequency power to an antenna with lowered inductance which is installed in a plasma generating chamber to generate inductively-coupled plasma from gas for forming silicon dots supplied into the chamber, and forming silicon dots on a substrate (S) placed in the chamber in the inductively-coupled plasma. The substrate pretreatment condition before the silicon dots are formed, the substrate temperature when the silicon dots are formed, and the gas pressure in the plasma generating chamber when the silicon dots are formed are controlled according to the particle diameters of the silicon dots.