发明名称 |
THIN GATE STRUCTURE FOR MEMORY CELLS AND METHODS FOR FORMING THE SAME |
摘要 |
Embodiments are described for reducing the programming voltage of a memory cell in a memory device. The memory cell includes a channel region extending between first and second diffusion regions formed in a substrate. A tunnel dielectric material is formed over the channel region. A storage medium is formed over the tunnel dielectric material to store electrical charge. The storage medium is disposed between a first interface material and a second interface material, each interface material provides a smoother interface between the storage medium and surrounding dielectric materials. A charge blocking material is formed over the storage medium, followed by a control gate material.
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申请公布号 |
WO2009032606(A3) |
申请公布日期 |
2009.05.07 |
申请号 |
WO2008US74248 |
申请日期 |
2008.08.25 |
申请人 |
MICRON TECHNOLOGY, INC.;BHATTACHARYYA, ARUP;DERDERIAN, GARO |
发明人 |
BHATTACHARYYA, ARUP;DERDERIAN, GARO |
分类号 |
H01L29/78;G11C11/40;H01L27/10;H01L29/80 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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