| 摘要 |
A method for forming a metal line of a semiconductor device is provided to lower a contact resistance by forming a copper layer on an RuN layer in a MOCVD(Metal Organic Chemical Vapor Deposition) manner. An insulating layer(13) having a contact hole and a trench is formed on a semiconductor substrate(11) including a lower structure(12). An RuN layer(14) as a diffusion barrier is formed on the insulating layer including the contact hole and the trench. The RuN layer includes halogen atoms absorbed onto a surface thereof. A copper layer(16) is formed on the RuN layer in order to bury the contact hole and the trench. The copper layer and the RuN layer are planarized to expose the insulating layer. The halogen atoms absorbed onto the surface of the RuN layer are iodine atoms. |
